∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 150°C Operating Junction Temperature NOMENCLATURE ORDERING INFORMATION Part N.

SFR08S60T2/F2/D is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Ac.

SFR08S60D

SFR08S60DTR

SFR08S60T2

SFR08S40T2

SFR05S40E

SFR05S40ETR

SFR101

SFR102

SFR1020

SFR1020C

SFR103

SFR104

SFR105